Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
该研究提出了一种基于物理信息神经算子(PINO)的人工智能代理模型,通过嵌入物理原理,将铁电垂直 NAND 器件的阈值电压漂移和保持特性模拟速度提升了超过 10000 倍,从而克服了传统 TCAD 工具在大规模参数优化中计算成本过高的问题。
Gyujun Jeong (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Sungwon Cho (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Minji Shon (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Namhoon Kim (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Woohyun Hwang (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Kwangyou Seo (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Suhwan Lim (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Wanki Kim (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Daewon Ha (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Prasanna Venkatesan (NVIDIA, Santa Clara, CA, USA), Kihang Youn (NVIDIA, Santa Clara, CA, USA), Ram Cherukuri (NVIDIA, Santa Clara, CA, USA), Yiyi Wang (NVIDIA, Santa Clara, CA, USA), Suman Datta (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Asif Khan (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Shimeng Yu (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA)2026-03-10🤖 cs.LG