Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
本論文は、物理法則を学習アーキテクチャに組み込んだ物理情報ニューラル演算子(PINO)に基づく AI サロゲートモデルを開発し、フェロ電気垂直 NAND のデータ保持特性を TCAD 計算に比べて 1 万倍以上高速かつ高精度に予測可能にしたことを報告しています。
Gyujun Jeong (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Sungwon Cho (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Minji Shon (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Namhoon Kim (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Woohyun Hwang (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Kwangyou Seo (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Suhwan Lim (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Wanki Kim (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Daewon Ha (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Prasanna Venkatesan (NVIDIA, Santa Clara, CA, USA), Kihang Youn (NVIDIA, Santa Clara, CA, USA), Ram Cherukuri (NVIDIA, Santa Clara, CA, USA), Yiyi Wang (NVIDIA, Santa Clara, CA, USA), Suman Datta (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Asif Khan (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Shimeng Yu (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA)2026-03-10🤖 cs.LG