Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
이 논문은 강유전체 수직 NAND 의 데이터 유지 특성을 분석할 때 기존 TCAD 시뮬레이션의 높은 계산 비용을 극복하기 위해 물리 법칙을 학습 구조에 통합한 PINO 기반 AI 대리 모델을 개발하여, 물리적 정확도를 유지하면서 10,000 배 이상의 속도 향상을 달성했음을 보여줍니다.
Gyujun Jeong (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Sungwon Cho (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Minji Shon (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Namhoon Kim (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Woohyun Hwang (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Kwangyou Seo (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Suhwan Lim (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Wanki Kim (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Daewon Ha (Semiconductor Research and Development, Samsung Electronics Co., Ltd, South Korea), Prasanna Venkatesan (NVIDIA, Santa Clara, CA, USA), Kihang Youn (NVIDIA, Santa Clara, CA, USA), Ram Cherukuri (NVIDIA, Santa Clara, CA, USA), Yiyi Wang (NVIDIA, Santa Clara, CA, USA), Suman Datta (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Asif Khan (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA), Shimeng Yu (School of Electrical and Computer Engineering, Georgia Institute of Technology, GA, USA)Tue, 10 Ma🤖 cs.LG