Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy
该研究利用中红外与太赫兹波段散射型扫描近场光学显微镜(s-SNOM)技术,实现了对同质外延 GaN 器件中载流子分布、晶格变化及亚表面缺陷的高分辨率、高灵敏度表征,其性能优于微区拉曼映射和开尔文探针力显微镜等传统方法。
Hossein Zandipour, Felix Kaps, Robin Buschbeck, Maximilian Obst, Aditha Senarath, Richarda Niemann, Niclas S. Mueller, Gonzalo Alvarez-Perez, Katja Diaz-Granados, Ryan A Kowalski, Jakob Wetzel, Raghunandan Balasubramanyam Iyer, Matthew Wortel, J. Michael Klopf, Travis Anderson, Alan Jacobs, Mona Ebrish, Lukas M. Eng, Alexander Paarman, Susanne C. Kehr, Joshua D. Caldwell, Thomas G. FollandWed, 11 Ma🔬 cond-mat.mtrl-sci