Self-oriented Seed Formation and Dynamic Annular-Gap Evolution During Sustained Long-length Entirely Detached Crystal Growth in the Vertical Directional Solidification (VDS)
本研究表明,通过形成自取向晶种及随后演化的动态环形间隙,在垂直定向凝固(VDS)工艺中实现了锑基半导体持续的长长度完全脱离晶体生长,从而获得了结构完美度显著提升且位错密度降低的晶体。