Quantum communication networks with defects in silicon carbide
本文综述了碳化硅(SiC)缺陷作为量子通信网络节点的优势,特别是其电信波段光学跃迁和自旋相干性,并通过建模记忆增强协议分析了超越直接点对点链路性能所需的关键参数,从而提出了实现大规模 SiC 量子通信网络部署的路径。
原作者:Philipp Sohr, Philipp Koller, Sebastian Ecker, Matthias Fink, Thomas Scheidl, Rupert Ursin, Muhammad Junaid Arshad, Cristian Bonato, Pasquale Cilibrizzi, Adam Gali, Péter Udvarhelyi, Alberto Politi, OPhilipp Sohr, Philipp Koller, Sebastian Ecker, Matthias Fink, Thomas Scheidl, Rupert Ursin, Muhammad Junaid Arshad, Cristian Bonato, Pasquale Cilibrizzi, Adam Gali, Péter Udvarhelyi, Alberto Politi, Oliver J. Trojak, Misagh Ghezellou, Jawad Ul Hassan, Ivan G. Ivanov, Nguyen Tien Son, Guido Burkard, Benedikt Tissot, Joop Hendriks, Carmem M. Gilardoni, Caspar H. van der Wal, Christian David, Masa Mokhtarzadeh, Thomas Astner, Michael Trupke
原作者: Philipp Sohr, Philipp Koller, Sebastian Ecker, Matthias Fink, Thomas Scheidl, Rupert Ursin, Muhammad Junaid Arshad, Cristian Bonato, Pasquale Cilibrizzi, Adam Gali, Péter Udvarhelyi, Alberto Politi, Oliver J. Trojak, Misagh Ghezellou, Jawad Ul Hassan, Ivan G. Ivanov, Nguyen Tien Son, Guido Burkard, Benedikt Tissot, Joop Hendriks, Carmem M. Gilardoni, Caspar H. van der Wal, Christian David, Masa Mokhtarzadeh, Thomas Astner, Michael Trupke
这是一篇关于利用碳化硅(SiC)中的缺陷构建量子通信网络的综述与模拟研究论文。文章详细探讨了 SiC 作为量子节点平台的潜力,特别是其缺陷中心在自旋 - 光子接口(SPI)中的应用,并通过模拟“存储辅助的测量设备无关量子密钥分发(MA-MDI-QKD)”协议,评估了 SiC 器件在长距离量子通信中的性能表现及未来发展的路线图。