Programmable Magnetic Hysteresis in Orthogonally-Twisted Two-Dimensional CrSBr Magnets via Stacking Engineering
By engineering the stacking configuration and twist angle of orthogonally-twisted CrSBr van der Waals magnets, researchers demonstrate a highly tunable magnetic hysteresis that enables on-demand switching between volatile and non-volatile memory states and controls abrupt spin-reversal processes, offering a new pathway for miniaturized spintronic devices.