Polarization Engineering of the Orbital Hall Conductivity in Two-dimensional Ferroelectric Higher-Order Topological Insulator TlS and SnS
This study reveals that ferroelectric polarization in two-dimensional higher-order topological insulators TlS and SnS serves as a tunable mechanism to engineer and reversibly switch orbital Hall conductivity, thereby establishing a new pathway for controllable orbitronics through the coupling of ferroelectricity and band topology.