4090 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper presents a free-space plasmonic modulator for the mid-infrared atmospheric window that utilizes a single heavily-doped semiconductor layer with a field-effect gate to electrically control both linear transmittance/reflectance and third-harmonic generation efficiency, offering a simple and viable route for fast mid-IR communications.
This study demonstrates that simultaneous Pb and Sb substitution in MnPb(BiSb)Te crystals enables independent control over the topological phase and Fermi level position, where Pb concentration exclusively dictates the bulk band gap and topological transition while the Pb/Sb ratio determines the Dirac point location.
This paper establishes a design principle for achieving quasi-isotropic Heisenberg exchange in rare-earth quantum magnets by demonstrating that virtual hopping within the ground-state Kramers doublet dominates isotropic interactions, which is maximized when the doublet exhibits strong maximal-angular-momentum character perpendicular to the superexchange plane.
This study demonstrates that injecting current into a polycrystalline NiCo2O4 film drastically alters its resistivity-temperature characteristics by enhancing spin alignment and double-exchange interactions at grain boundaries, thereby validating a new spin-related transport model that explains the material's potential as an efficient spin source for Si-based devices.
This study introduces the dynamic magnetic pair-density function (DymPDF) as a novel real-space analysis tool derived from inelastic neutron scattering data to characterize local magnon modes and their acoustic-to-optical transitions in both periodic and non-periodic magnetic systems.
This paper introduces Contrastive Regularized MSE (CRMSE), a post-training method that corrects the distributional drift of machine learning interatomic potentials by augmenting standard regression loss with a contrastive term derived from the Kullback-Leibler divergence, thereby enabling accurate thermodynamic sampling without requiring additional ab initio data.
This study demonstrates that doping LiLaZrO with 0.10 atoms per formula unit of titanium via solid-state reaction significantly enhances its densification and ionic conductivity to Scm with a low activation energy of 0.37 eV, making it a promising candidate for solid-state battery applications.
By integrating Flory-Huggins thermodynamics with two-fluid viscoelasticity, this study reveals a universal compressive rim at the diffusion front of source-driven biopolymer condensates and demonstrates how this framework explains the structural and dynamic properties of the nucleolus.
This paper demonstrates that the optimal design for addressable self-assembly to maximize yield and prevent monomer depletion is to engineer interactions such that strong bonds form a loop-free spanning tree of the target structure while all other interactions remain weak.
This paper demonstrates that a conductive, partly crystalline GaOx hole transport layer, formed via ion exchange during co-evaporation without requiring additional Cu, Na, or heavy alkalis, enables a pure CuInSe2 bottom solar cell to achieve a record-certified open-circuit voltage of 552 mV and an active area efficiency exceeding 16%.