Optoelectronic and Thermoelectric Properties of High-Performance AlSb Semiconductors
This study employs advanced first-principles calculations to characterize aluminum antimonide (AlSb) in both cubic and hexagonal phases, revealing their quasi-direct bandgap nature, strong optoelectronic response, and complementary thermoelectric advantages driven by carrier mobility and reduced thermal conductivity, while emphasizing the critical role of accurately modeling Sb d-electron effects for reliable property prediction.
Dilshod Nematov, Amondulloi Burkhonzoda, Iskandar Raufov, Sherali Murodzoda, Saidjafar Murodzoda, Sakhidod Sattorzoda, Anushervon Ashurov, Makhsud Barot Islomzoda, Kholmirzo Kholmurodov2026-04-09🔬 cond-mat.mtrl-sci