Chemical tuning of electronic and transport properties of the Bi-Se-Te family of topological insulators
Using laser-based ARPES, this study demonstrates that increasing tellurium content in Bi₂(Se₁₋ₓTeₓ)₃ topological insulators lowers the chemical potential and bulk density of states, inducing a transition to semiconducting behavior where metallic topological surface states dominate electrical transport at low temperatures.