3525 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
Using square-pulsed source thermoreflectance, this study reveals that interfacial thermal conductance at solid-liquid interfaces increases with modulation frequency due to weak coupling between diffusional and phonon-like modes over a finite nonequilibrium length, challenging the assumption of fully equilibrated liquid modes.
This study employs first-principles density functional theory to demonstrate that spin polarization observed in photoemission from chiral molecule-metal interfaces arises primarily from the hybrid electronic structure of the interface rather than molecular chirality alone, as opposite enantiomers and non-chiral controls yield qualitatively similar responses.
This paper introduces a square-pulsed source thermoreflectance method that simultaneously quantifies the pressure-dependent bulk thermal properties and interfacial thermal resistance of thermal interface materials, revealing distinct transport mechanisms and hysteresis behaviors across different material types under mechanical loading.
This paper demonstrates that palladium films deposited via high-pressure magnetron sputtering exhibit a record-breaking resistance decrease of up to 1/335 upon hydrogenation, a phenomenon driven by improved grain contacts and hydrogen-induced crystallization that offers a promising pathway for enhancing hydrogen sensor performance.
This study experimentally verifies the GNoME-predicted MnFeCoSi compound, confirming its rhombohedral single-phase structure and identifying it as a soft ferromagnet with a Curie temperature of 1039 K.
This study reveals that interlayer interactions in bilayer V2S2O significantly modulate valence band structures and suppress piezomagnetism, while gate-voltage modulation induces asymmetric control over spin-polarized transport in Au/V2S2O/Au devices, offering critical insights for optimizing multilayer altermagnetic spintronics.
This study predicts that the experimentally synthesized material LiVF, which simultaneously hosts altermagnetism and charge-order-induced ferroelectricity, enables ultrafast (15-femtosecond) electrically controlled magnetism through strong magnetoelectric coupling.
This paper reveals that the high-temperature thermal stability of two-dimensional platinum oxides arises from a structural transition to a mechanically flexible, isostatic network that forms a commensurate Moiré superlattice with the substrate, thereby relaxing elastic energy and overcoming the instability caused by the over-constrained lattice of the initial phase.
This study demonstrates that fine-tuning universal machine-learning interatomic potentials on systematically generated structures enables near-DFT accuracy in predicting mixing energies for 2D high-entropy alloys, overcoming the computational limitations of direct DFT calculations for complex systems like experimentally synthesized (Mo,Ta,Nb,W,V)S.
This study demonstrates for the first time the successful formation of silver and gold plasmonic nanoparticles within GaO thin films via ion implantation and thermal annealing, revealing distinct localized surface plasmon resonance behaviors and establishing ion implantation as a viable method for integrating plasmonic nanostructures into this wide-bandgap semiconductor.