4119 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This study investigates how irradiating epitaxial thin films with a focused He ion beam induces lattice expansion, reduces the critical temperature, and drives a transition to an insulating state, thereby demonstrating a powerful technique for fabricating superconducting nano-devices with controlled structural and transport properties.
This paper demonstrates that reversible uniaxial strain can precisely and elastically control the doping and bandgap of suspended single-wall carbon nanotube quantum dots through quantum transport straintronics, offering a capacitive-free mechanism for applications in qubits and molecular transistors.
This paper presents a thermodynamically consistent phase field model that simulates hydrogen-assisted cracking in polycrystalline materials by coupling crack propagation with hydrogen segregation and interfacial energy reduction, successfully capturing the transition from transgranular to intergranular failure under hydrogen-enhanced decohesion mechanisms.
This paper generalizes the Multipole-Padé approximant framework to create a compact, symmetry-conserving, and anisotropic representation of the inverse dielectric function for 2D metals, enabling efficient and accurate calculation of plasmonic properties and correlation energies across the full Brillouin zone while bridging *ab initio* calculations with analytical models.
This paper introduces a crosstalk-suppressed SPAD-array photon-correlation method to quantify multi-photon emission in over 1,000 colloidal quantum shells, revealing a near-Gaussian distribution of biexciton emission efficiencies and confirming that intra-batch correlations with particle brightness align with volume-scaling Auger quenching.
This paper introduces a Joint Approximate Diagonalization method for quasiparticle self-consistent calculations that utilizes the full dynamical self-energy and a density matrix derived from the full Green's function, achieving accuracy comparable to standard while offering improved agreement with high-level CCSD(T) reference values.
Using in-situ cryogenic electron microscopy on 1T-TiSe nanoflakes, this study demonstrates that charge density wave melting points depress as flake size decreases below 100 nm due to finite-size effects cutting off correlation length divergence, thereby confirming that electronic phase transitions in correlated states follow classical nucleation theory.
This paper demonstrates a scalable and deterministic method for constructing moiré superlattices in 2D materials using patterned thin-film stressors to induce controlled heterostrain, enabling the engineering of specific lattice deformations and in-plane polarization.
This study investigates the spin current symmetries in GdFeCo ferrimagnets across the magnetisation compensation temperature, revealing that spin Hall and spin anomalous Hall effect torques retain their signs due to distinct origins in Gd 5d and FeCo 3d electronic subsystems, respectively.
This study employs advanced computational methods to determine and analyze the polar and nonpolar band alignments of wurtzite BAlN alloys, revealing composition-dependent type I or II alignments and surface polarity effects that provide critical design guidelines for high-electron-mobility transistors and ultraviolet optoelectronic devices.