2959 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper characterizes the high detective quantum efficiency of the Timepix4 hybrid pixel detector in event-driven mode at 100 kV and 200 kV and demonstrates its capability to capture weak diffraction signals from polycrystalline gold nanoparticles at 200 kV.
This study investigates the correlations between dielectric properties, domain structure morphology, and phase states in Bi1-xSmxFeO3 nanoparticles by combining experimental measurements of temperature-dependent dielectric behavior with theoretical modeling based on the Ginzburg-Landau-Devonshire-Stephenson-Highland approach to elucidate ferro-ionic coupling effects.
This study introduces a computationally efficient framework that utilizes non-interacting electron density and Bayesian active learning to achieve highly accurate, zero-shot extrapolative predictions of alloy properties across vast compositional landscapes, significantly reducing the data requirements for discovering refractory high-entropy alloys.
This paper proposes that moire excitons in two-dimensional superlattices exhibit cooperative quantum optical phenomena, such as tunable superradiant and subradiant states and extreme optical switching, driven by their real-space lattice structure and controllable via electric fields, strain, or twist angle adjustments.
This paper extends a statistical framework to predict the thermodynamics of self-interstitial dumbbells in concentrated multicomponent alloys, revealing that solute elements like Cr can stabilize high-energy defects and induce symmetry-breaking distortions in the defect free energy surface.
By synthesizing high-quality rutile OsO2 single crystals, researchers discovered that while the material is initially a paramagnetic metal, applying high pressure (44 GPa) induces a metal-insulator transition and drives a phase change into an altermagnetic state, demonstrating that external pressure can effectively tune its magnetic ground state.
This study reports the successful synthesis of bulk OsO2 single crystals that outperform commercial RuO2 nanopowder in oxygen evolution reaction efficiency and stability, challenging the universal applicability of nanoscaling by demonstrating that crystal integrity is a critical descriptor for robust electrocatalysis.
This study investigates the magnetic properties and crystal electric field scheme of the spin-orbit coupled distorted honeycomb magnet BiErGeO, revealing short-range antiferromagnetic correlations, long-range order at 0.4 K, and persistent slow spin fluctuations below the transition temperature through a combination of magnetization, heat capacity, muon spin relaxation, and inelastic neutron scattering experiments.
This paper presents a device physics model demonstrating that Fermi-level pinning by donor-like defects at the p-ZnTe/p-CdSeTe hole-selective contact causes downward band bending and fill factor losses in CdSeTe/CdTe solar cells, while suggesting that passivating these interfaces could significantly enhance efficiency, particularly in thinner devices with longer carrier diffusion lengths.
This study demonstrates that polycrystalline aluminum nitride (AlN) thin films deposited at back-end-of-line compatible low temperatures exhibit consistently high thermal conductivity across various substrates and can reduce peak device temperatures by up to 44%, establishing AlN as a practical heat spreader material for integrated circuits.