2882 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper demonstrates that spin inertia, when coupled with angular-momentum-breaking interactions like pseudodipolar forces in a honeycomb ferromagnet, hybridizes precessional and nutational magnons to open topological gaps and generate chiral edge states, establishing a new route for engineering topological phases in magnetic materials.
Using molecular dynamics based on density functional theory, this study reveals that the complex high-pressure crystal phases of methane arise from the packing of specific supermolecular clusters (icosahedral and polyhedral) where a trade-off between efficient packing and suppressed rotational entropy, driven by orientation-dependent intermolecular interactions, explains the observed non-cubic symmetries and sluggish phase transitions.
This paper demonstrates that nanosecond laser doping of epitaxial boron-doped silicon achieves record-breaking carrier concentrations and lattice deformations, with the observed hyperdoping limits quantitatively explained by a combinatorial model showing that inactive dopant complexes form when neighboring substitutional sites are occupied.
This study combines X-ray diffraction experiments and molecular dynamics simulations to reveal the anisotropic strain-stress dynamics and orientation-independent phase transitions in -GaO induced by ion implantation, establishing a framework to link macroscopic diffraction data with atomistic models for engineering material properties.
This paper demonstrates a fifty-fold enhancement in orbital Hall magnetoresistance in CoO/Cu* heterostructures driven by a unique interaction between dynamic orbital currents from oxidized copper and the static orbital angular momentum of the antiferromagnet CoO, offering a pathway to highly efficient orbitronic devices.
This study theoretically investigates the real-time exciton dynamics in two-dimensional h-BN and GeS monolayers under ultrashort laser pulses by combining a full-electron LAPW+lo method with a time-dependent adiabatic $GW$ approximation to elucidate the critical role of many-body effects in shaping ultrafast optical responses.
By combining high-resolution spectroscopy with ab initio calculations, this study resolves controversies surrounding -MnTe by identifying previously misattributed Raman modes as artifacts of a secondary MnTe phase, thereby establishing the material's intrinsic optical phonon frequencies and confirming the preservation of its 6-fold rotation and inversion symmetries.
This study investigates structural commonalities and differences among non-crystalline materials by analyzing Pair Distribution Functions, revealing that amorphous semiconductors exhibit similar network-forming patterns with near-zero values between their first and second peaks, whereas metallic systems display distinct features including a non-zero inter-peak value and a characteristic "elephant peak."
This study demonstrates that periodically driven linearly polarized light can uniquely induce an anomalous Hall effect and drive topological phase transitions in altermagnetic topological insulators by breaking their intrinsic symmetries, a phenomenon absent in conventional antiferromagnets, thereby offering a robust method for distinguishing these materials and enabling dissipationless spintronic applications.
This paper establishes a unified framework in altermagnets, specifically identifying monolayer V2STeO and VO families, where a gate-tunable potential enables the electrical switching between robust helical and chiral topological transport phases via spin-valley-momentum-locked edge states.