Intrinsic Even-Odd Thickness-Driven Anomalous Hall in Epitaxial MnBi2Te4 Thin Films
Through precise molecular beam epitaxy synthesis of MnBi2Te4 thin films, researchers demonstrated that controlling layer thickness induces a striking even-odd dependence in the anomalous Hall effect, where odd layers exhibit robust non-compensated antiferromagnetism and even layers show minimal response, offering a pathway toward realizing the zero-field quantum anomalous Hall effect.