Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.

At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.

Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.

🔬 materials science

Dirac semimetal strontium iridate thin films with strong spin-orbit interaction for magnetic heterostructures

This study investigates the structural, electronic, and magnetic properties of epitaxial SrIrO3_3 thin films and SrIrO3_3/La0.7_{0.7}Sr0.3_{0.3}MnO3_3 heterostructures across various substrates, revealing how epitaxial strain and strong spin-orbit interaction tune transport phenomena and Kondo scattering for potential applications in spintronic oxide devices.

Gennady A. Ovsyannikov, Nikita V. Dubitskiy, Georgi D. Ulev, Karen Y. Constantinian, Ivan E. Moskal, Victoria A. Baydiko (…)2026-09-25
🔬 condensed matter

Compact representation of strongly correlated Green's functions: the MOR+EC way to explore phase space

The paper introduces MOR+EC, a framework combining eigenvector continuation and model order reduction to efficiently generate reusable, high-accuracy reduced-order models of single-particle Green's functions, enabling rapid, high-resolution exploration of phase diagrams and frequency spectra in many-body methods like DMFT.

Norman Hogan, A. F. Kemper, Carlos Mejuto-Zaera2026-09-25
🔬 materials science

Large-Area SnS Crystals by Controlled Sn-S Chemical Vapor Deposition: Growth Optimization, Morphology, and Raman Characterization

This paper reports the successful growth of large-area, high-quality tin monosulfide (SnS) crystals with lateral dimensions up to 350 micrometers via optimized chemical vapor deposition, demonstrating that precise control of precursor temperatures and gas flows yields phase-pure, morphologically well-defined crystals suitable for optoelectronic and device applications.

Bilal Ahmed2026-09-25
🔬 mesoscale physics

Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization

This paper reports the achievement of record-breaking low-temperature electron mobility exceeding 1.7×1061.7\times10^6 cm2^2 V−1^{-1} s−1^{-1} in InAs quantum wells grown on insulating InP substrates by optimizing a convex compositional grading profile in an InAlAs metamorphic buffer, thereby enabling thick, Ga-free layers ideal for topological superconductivity research.

Tyler Lindemann, Rojila Ghimire, Alejandro Alcaraz Ramirez, Ahmad Azizimanesh, Sergei Gronin, Ray Kallaher, Michael J. M (…)2026-09-25
🔬 materials science

Magnetostrictive properties in Fe4−x_{4-x}Cox_{x}N films: Insight from experiments and first-principles calculations

This study combines molecular beam epitaxy experiments and first-principles calculations to characterize the magnetostrictive properties of Fe4−x_{4-x}Cox_{x}N films, revealing giant tunability and sign reversal in the λ{\lambda}100_{100} constant while highlighting the sensitivity of theoretical predictions to atomic disorder and providing essential parameters for spintronic device design.

Huameng Yu, Keita Ito, Shoya Sakamoto, Ivan Kurniawan, Yoshio Miura, Yasushi Endo, Takeshi Seki2026-09-25
🔬 materials science

Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach

This study utilizes an ab initio-based approach to explain the discontinuous increase in nitrogen incorporation on vicinal 4H-SiC(000-1) C-faces at C/Si ratios between 1.0 and 1.5 as a result of a transition from stable Si-terminated to C-H-terminated step edges, which offer lower nitrogen substitution energies.

Wataru Ota, Akira Kusaba, Yoshihiro Kangawa, Keisuke Kurashima, Ichiro Mizushima, Kenji Shiraishi2026-09-25