Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
This paper demonstrates that fluorination-induced AlFx formation combined with SiNx passivation effectively suppresses defect-assisted leakage in grafted p-Si/n-AlN heterojunction diodes by removing RTA-induced oxides and stabilizing the interface, thereby enabling low-leakage ultrawide-bandgap power electronics.