Physical mechanisms of ohmic contact and tunnel diode: A novel explanation in terms of impurity-photovoltaic-effect resulting from infrared self-emission at room-temperature
This paper proposes a novel particle-based explanation for ohmic contacts and tunnel diodes, attributing their behavior to an impurity-photovoltaic effect where infrared self-emission from room-temperature blackbody radiation generates defect-mediated carriers that are swept by the junction's built-in field, thereby complementing the traditional quantum-mechanical tunneling model.