Impurity Self-Trapping in Lattice Bose systems
Using sign-problem-free quantum Monte Carlo simulations, this study maps the global phase diagram of a mobile impurity in a two-dimensional Bose-Hubbard model to reveal two distinct self-trapping mechanisms: an interaction-driven crossover in the superfluid phase characterized by impurity winding number collapse, and a compressibility-controlled localization in the Mott insulator phase driven by bath stiffness loss and defect quantization.