Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model
This paper proposes a microscopic model for surface roughness scattering in MOSFET inversion layers that accounts for the stochastic nature of roughness position, revealing that the scattering rate is intrinsically nonlocal and that conventional Fermi's golden rule approaches tend to underestimate SR-limited mobility under strong fields and low electron energies.