Explore the fascinating intersection where quantum materials meet the complexity of everyday environments in the Cond-Mat — Mes-Hall section. This field investigates how tiny particles behave when caught between the orderly world of single atoms and the chaotic nature of bulk matter, revealing the hidden rules that govern electricity, magnetism, and heat in novel substances.

Gist.Science brings these cutting-edge discoveries to you directly from arXiv, the leading repository for physics preprints. We process every new submission in this category as soon as it appears, offering both straightforward, plain-language explanations and deep technical summaries to help researchers and curious minds alike grasp the latest breakthroughs without getting lost in dense equations.

Below are the most recent papers in this dynamic area of condensed matter physics, ready for you to explore.

🔬 mesoscale physics

Interfacial Spin-to-Charge Conversion in Sputtered MoTe2 Heterostructures Probed by Spin Pumping and Spin-Torque Ferromagnetic Resonance

This study demonstrates that spin-to-charge conversion in sputtered MoTe2_2/Py heterostructures is predominantly governed by the interfacial Rashba-Edelstein effect rather than bulk transport, as evidenced by thickness-independent spin-torque efficiencies observed via spin-pumping and spin-torque ferromagnetic resonance measurements.

J. L. Costa, E. Santos, E. L. T. França, J. B. S. Mendes, A. Azevedo2026-09-01
🔬 mesoscale physics

Device characterization of Si//SiGe double quantum dots using exchange oscillations in Earth's magnetic field

This paper demonstrates that intrinsic magnetic-field gradients from residual nuclear spins in Si/SiGe double quantum dots can be utilized to perform exchange oscillations and characterize device parameters at zero applied magnetic field, offering a simple, high-throughput diagnostic tool for hybrid semiconductor-superconductor qubits without the need for micromagnets or complex calibration.

Holly G. Stemp, Harry Hanlim Kang, Chih Hwan Yang, Gabriel D. Cutter, Frederike Brockmeyer, Patrick J. Strohbeen, Max Ha (…)2026-09-01
🔬 mesoscale physics

Engineering multi-photon dissipation with a dc-voltage-biased Josephson junction

This paper demonstrates that a dc-voltage-biased SQUID can engineer multi-photon dissipation (converting one, two, or four photons into a single lossy photon) while suppressing parasitic nonlinearities, offering a viable route for stabilizing cat qubits and reservoir engineering.

Marco Paradina, Ambroise Peugeot, Roberto Negrin, Oscar Novat, Tristan Villain, Anil Murani, Jean-Loup Ville, Sébastien (…)2026-09-01
🔬 mesoscale physics

Interacting Chern insulator transition on the sphere: revealing the Gross-Neveu-Yukawa criticality

Using exact diagonalization of Dirac fermions on a sphere to leverage full SO(3)SO(3) symmetry and circumvent the parity anomaly, this study demonstrates that the interaction-driven multicritical point of the two-dimensional Chern insulator transition belongs to the N=2N=2 Gross-Neveu-Yukawa universality class, with extracted operator scaling dimensions showing strong agreement with conformal bootstrap predictions.

Zhi-Qiang Gao, Taige Wang, Dung-Hai Lee2026-08-31
🔬 mesoscale physics

An expandable kinetic Monte Carlo platform for modelling electron transport through chiral molecules

This paper presents an efficient, expandable kinetic Monte Carlo platform that models electron transport through chiral molecules by independently treating spin channels, thereby quantifying spin filtering and reproducing the voltage-dependent asymmetry characteristic of electric Magnetochiral Anisotropy (eMChA) to help elucidate the microscopic origins of chiral-induced spin phenomena.

Silvia Giménez-Santamarina, Andrés Mora Martínez, Gérliz M. Gutiérrez-Finol, Alejandro Gaita-Ariño2026-08-31
🔬 applied physics

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents and experimentally validates a unified compact model that accurately simulates the electrical characteristics of diverse emerging transistor technologies—including OSFETs, 2DFETs, CNFETs, and cryogenic MOSFETs—by integrating quantum confinement, trap charges, band-tail states, and temperature-dependent transport mechanisms across various operating regimes.

Chien-Ting Tung2026-08-31