2360 papers
Explore the fascinating intersection where quantum materials meet the complexity of everyday environments in the Cond-Mat — Mes-Hall section. This field investigates how tiny particles behave when caught between the orderly world of single atoms and the chaotic nature of bulk matter, revealing the hidden rules that govern electricity, magnetism, and heat in novel substances.
Gist.Science brings these cutting-edge discoveries to you directly from arXiv, the leading repository for physics preprints. We process every new submission in this category as soon as it appears, offering both straightforward, plain-language explanations and deep technical summaries to help researchers and curious minds alike grasp the latest breakthroughs without getting lost in dense equations.
Below are the most recent papers in this dynamic area of condensed matter physics, ready for you to explore.
This review examines the compatibility between state-of-the-art semiconductor spin qubits and CMOS industry VLSI principles, highlighting key operational and material differences to accelerate the industrial-scale production of fault-tolerant quantum computers.
This paper demonstrates a scalable two-dimensional silicon spin qubit array utilizing industrial multilayer interconnects that maintains high gate fidelities and enables defect-tolerant reconfigurability through fully controllable nearest-neighbor exchange interactions.
This paper theoretically demonstrates that in short, disordered semiconductor-superconductor nanowires, the exponential protection of Majorana zero modes is highly constrained and often suppressed by disorder, implying that the definition of "topology" in such finite systems is not unique and requires context-dependent analysis.
This paper demonstrates that generalized Cutler-Mott relations remain valid across both Fermi-liquid and non-Fermi-liquid regimes in a two-site charge Kondo simulator, thereby establishing a framework for evaluating the performance of such quantum simulators.
This paper predicts that the unambiguous detection of the superconducting Higgs mode can be achieved in microwave-irradiated asymmetric and transparent Josephson junctions by observing resonant enhancements in the second harmonic of the current-phase relation at zero bias and the AC Josephson current at finite bias.
This paper investigates three-dimensional superconducting altermagnets to demonstrate how the interplay between superconducting and altermagnetic symmetries generates topologically protected crossed surface flat bands and Bogoliubov-Fermi surfaces, which collectively produce distinct charge conductance signatures for experimental detection.
This paper investigates electric and heat current fluctuations in a two-channel charge Kondo circuit, demonstrating that voltage- and temperature-driven noise ratios exhibit gate-voltage oscillations and logarithmic temperature dependencies characteristic of non-Fermi-liquid behavior, thereby confirming that fundamental relations linking noise to thermoelectric transport persist beyond the Fermi-liquid paradigm.
This paper investigates the quantum dynamics of monitored free fermions by extending the nonlinear sigma-model field theory to finite evolution times and various initial states, thereby analytically and numerically characterizing the development of quantum correlations and the scaling behavior near the measurement-induced phase transition in two dimensions.
This paper demonstrates a purely optical, non-destructive readout of the reconfigurable, multistable layered magnetic domain structures in the van der Waals semiconductor CrSBr, revealing a thickness-dependent cascade of intermediate magnetic states that positions the material as a promising platform for spin-optoelectronics and neuromorphic computing.
This study utilizes resonant Raman scattering spectroscopy to characterize the phonon modes and structural symmetries of the charge density wave state in quasi-one-dimensional NbTe, revealing a thermal hysteresis between commensurate and incommensurate phases that suggests potential applications in memory devices.