3501 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper introduces a physics-informed, interpretable linear framework that integrates compositional, orbital, and crystallographic descriptors to rapidly and accurately identify topological materials, overcoming the limitations of composition-only heuristics by distinguishing polymorphs and enabling high-throughput discovery where conventional symmetry indicators fail.
Using pump-probe Lorentz transmission electron microscopy, researchers discovered that the photothermal recovery of magnetic order in a chiral magnet exhibits stochastic dynamics and transient blurring around topological edge dislocations, suggesting that such defects enhance stochasticity during magnetic phase transitions.
This study reveals that while niobium primarily governs the evolution and symmetry of martensite in Ti-Nb-O alloys by stabilizing the phase, oxygen distinctly modifies transformation pathways by suppressing phase formation at lower niobium levels but inhibiting long-range martensitic transformation at higher levels due to local lattice distortions.
The paper introduces ORION, a universal machine-learning force field built on the Neuroevolution Potential framework that achieves near-DFT accuracy and high efficiency for C, H, O, N, S, and P systems by leveraging a chemically rich dataset generated through an integrated top-down and bottom-up sampling strategy.
This paper demonstrates the controlled fabrication of VO nanocylinders with tailored phase transition hysteresis via lithographic patterning and dewetting, offering a scalable pathway for energy-efficient neuromorphic photonic memory devices.
This paper provides a comprehensive overview of continuum mechanics, detailing the atomic and macroscopic distinctions between elastic and plastic material behavior, while also presenting the theoretical foundations and design principles for pressure vessels and thin axisymmetric shells under various loading conditions and standards.
This study demonstrates that wide-gap (1.6 eV) semitransparent Cu(In,Ga)S₂ solar cells with In₂O₃:Sn transparent back contacts can achieve efficiencies near 13% by optimizing sodium supply and high-temperature growth, while balancing GaOₓ interfacial layer thickness to prevent current blocking.
This study analyzes 18.5% efficient 1.0 eV (Ag,Cu)(In,Ga)Se2 solar cells for tandem applications, identifying that while current losses stem from absorption, the most significant performance limitations arise from non-radiative recombination affecting open-circuit voltage and a high diode factor indicating strong space charge region recombination.
This study demonstrates that incorporating the solvent additive 1-chloronaphthalene (1-CN) significantly enhances the photostability of PM6:Y12 organic solar cells by stabilizing the donor's HOMO energy level and preserving nanostructural integrity, thereby preventing the driving force loss and efficiency degradation observed in additive-free devices.
This study demonstrates that the tin content in atomic layer deposition-grown ZnSnO buffer layers for chalcopyrite solar cells directly correlates with the conduction band minimum, where low tin induces detrimental conduction band cliffs that lower open-circuit voltage, while high tin creates electron transport barriers that reduce fill factor and short-circuit current.