2792 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This study demonstrates that thermodynamic surface reconstruction, rather than homogeneous mixing assumptions, is essential for accurately predicting the catalytic behavior of high-entropy alloys by revealing how surface segregation creates chemically selective interfaces that align with experimental activity landscapes.
This first-principles study reveals that the electronic structure of the spin-orbit-coupled metal PbReO is characterized by highly anisotropic quasi-one-dimensional Fermi surfaces and nearly dispersionless molecular-orbital-induced flat bands, which together provide a microscopic explanation for its experimentally observed anisotropic transport and successive phase transitions.
This study demonstrates that electrostatic doping in a gated WSe monolayer induces a strong, nontrivial, and asymmetric dependence in the magnetic-field brightening rates of dark excitons and trions, revealing distinct carrier interaction mechanisms that govern the optical response of doped transition metal dichalcogenides.
This study demonstrates that topochemical fluorination of bulk LaNiO single crystals using various fluorinating agents successfully incorporates fluorine to induce a novel superstructure and modify magnetic ordering while preserving the Ruddlesden-Popper framework, offering unprecedented insights into intrinsic structure-property relationships unattainable in polycrystalline or thin-film samples.
This study utilizes first-principles calculations to reveal how mass contrast and doping in transition metal dichalcogenide heterobilayers govern the magnitude and direction of lattice thermal conductivity through phonon localization and scattering mechanisms, enabling the tunability of thermal transport for novel 2D functional materials.
This study employs first-principles calculations and nonradiative multiphonon theory to demonstrate that substitutional platinum acts as an efficient nonradiative recombination center in silicon, with its experimentally consistent carrier capture cross sections critically dependent on accounting for symmetry-equivalent Jahn-Teller distorted configurations.
This first-principles study reveals that Mg2TmH6 (Tm = Rh, Pd, Ir, Pt) hydrides exhibit a promising combination of favorable hydrogen storage capacity, mechanical robustness, superconductivity, and multifunctional optical properties, positioning them as strong candidates for advanced energy, superconducting, and optoelectronic applications.
This paper demonstrates that binary logic gates (NOT and AND) can be realized in Kane-Mele nanostructures by using local electrostatic and magnetic perturbations to controllably reroute topological edge currents, offering a robust and transparent platform for post-CMOS device concepts.
This study demonstrates reversible, on-demand manipulation of collective and separate metal-insulator transitions in vanadium dioxide homojunctions and trilayers through engineered oxygen deficiency and ionic hydrogen control, thereby transforming the collective length scale into a dynamic design parameter for adaptive correlated electronics.
This paper proposes a universal spin-axis-layer locking (SALL) paradigm, demonstrated via first-principles calculations on twisted bilayer CuBr2, which enables intrinsic bipolar altermagnetic semiconductors with gate-tunable, simultaneous switching of carrier type, spin, and active layer without requiring external strain.