Band gap renormalization, carrier mobility, and transport in MgSi and CaSi: \textit{Ab initio} scattering and Boltzmann transport equation study
This study employs first-principles electron-phonon interaction calculations and the Boltzmann transport equation to comprehensively analyze the temperature-dependent band gaps, carrier mobilities, and thermoelectric transport properties of MgSi and CaSi, demonstrating that accurately accounting for electron-phonon scattering is critical for predicting experimental mobility and thermoelectric performance while identifying nanostructuring as a viable strategy to enhance their figure of merit.