Filamentary Transport and Thermoelectric Effects in Mushroom Phase Change Memory Cells
This study utilizes 2D finite-element electrothermal simulations to demonstrate that thermoelectric effects and filamentary transport in GeSbTe mushroom phase change memory cells significantly reduce Reset energy and power when current flows from the top electrode to the narrow bottom electrode, while also revealing that programming volume is independent of contact dimensions above 10 nm and that larger contacts trade increased variability for improved reliability.