2858 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper demonstrates a folded-bilayer graphene spin-valve device that achieves giant non-local spin signals in the millivolt range and pronounced spin-rectification effects, establishing a promising platform for active two-dimensional spintronic applications.
This study investigates the broadband terahertz conductivity and ultrafast photoconductivity of multilayer epitaxial graphene nanoribbons, revealing that near-field imaging detects nanoscale inhomogeneities while far-field spectroscopy distinguishes doped substrate layers from quasi-neutral layers that exhibit high mobility and strong positive photoconductivity driven by carrier temperature-dependent scattering mechanisms.
This paper presents a first-principles implementation of the DFT formalism within the all-electron FLAPW method using the FLEUR code, demonstrating improved accuracy for diverse materials ranging from covalent semiconductors to charge-transfer insulators by incorporating intersite Coulomb interactions derived via the constrained random-phase approximation.
This paper demonstrates a monolithic, two-step epitaxial growth method using buried stressors to fabricate precisely positioned, site-controlled InGaAs quantum dots with tunable local densities, enabling the integration of single-photon sources and microlasers on a single photonic chip for advanced quantum technologies.
This paper introduces a chemistry-agnostic, information-entropy-maximization protocol for generating training data that overcomes the limitations of current machine-learning interatomic potentials in complex, multi-elemental systems, thereby enabling robust and unbiased simulation of materials under extreme thermodynamic conditions.
This study utilizes a multi-step computational framework combining DFT-based descriptor screening with electrochemical stability analysis to identify Pd anchored at boron vacancies in defect-engineered h-BN as a robust, pH-tolerant single-atom catalyst for the hydrogen evolution reaction, while highlighting the necessity of stability filtering to eliminate initially promising but unstable candidates like Cu at nitrogen vacancies.
This paper demonstrates a top-down strategy using helium ion implantation to pattern transverse strain gradients in GdAuGe films, which successfully induces a near-room-temperature ferromagnetic response via flexomagnetism, thereby enabling precise control of magnetic phases in quantum materials.
This paper systematically benchmarks the latest generation of universal machine learning potentials in unconstrained global optimization tasks, revealing a wide performance spectrum from near ab initio accuracy to non-predictive results while demonstrating that several models can successfully capture subtle electronic structure features to identify complex crystal ground states.
This paper presents a parameter-free microscopic approach that successfully reproduces experimental photoluminescence spectra of CdSe/CdS nanocrystals by demonstrating that second-order diagonal vibronic couplings are the dominant source of homogeneous linewidth broadening at temperatures above 100–150 K, while off-diagonal couplings play a negligible role until near room temperature.
This study demonstrates that semi-insulating carbon-doped GaN exhibits high sub-bandgap photoconductivity with an ON/OFF ratio exceeding 10^7, where thermal quenching above a crossover temperature accelerates photocurrent decay by a factor of five to enable fast optical switching via a thermally activated recombination mechanism likely involving carbon-hydrogen defect complexes.