Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy
This paper demonstrates that combining mid-infrared and terahertz scattering-type scanning near-field optical microscopy (s-SNOM) enables high-resolution, non-destructive characterization of homo-epitaxial GaN p-i-n diodes by successfully disentangling carrier and lattice properties and detecting sub-surface defects with superior sensitivity compared to traditional metrologies like micro-Raman and KPFM.
Hossein Zandipour, Felix Kaps, Robin Buschbeck, Maximilian Obst, Aditha Senarath, Richarda Niemann, Niclas S. Mueller, Gonzalo Alvarez-Perez, Katja Diaz-Granados, Ryan A Kowalski, Jakob Wetzel, Raghunandan Balasubramanyam Iyer, Matthew Wortel, J. Michael Klopf, Travis Anderson, Alan Jacobs, Mona Ebrish, Lukas M. Eng, Alexander Paarman, Susanne C. Kehr, Joshua D. Caldwell, Thomas G. FollandWed, 11 Ma🔬 cond-mat.mtrl-sci