4179 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper reports the successful fabrication and operation of a three-terminal field-effect device utilizing a flip-chip technique to preserve a pristine two-dimensional electron gas, achieving a record-breaking electron mobility exceeding 40 million cm²/(Vs) that doubles previous benchmarks and opens new avenues for quantum transport applications.
This paper theoretically demonstrates that the stability of topological interface states in armchair graphene nanoribbon heterostructures embedded in boron nitride sheets critically depends on the surrounding topology, where symmetric BN environments destroy these states through chirality breaking while reverse-topology environments preserve them and enhance interdot hopping.
This paper introduces a unified variational framework that integrates phase-field fracture and third-medium contact within finite deformation hyperelasticity by regularizing both crack topology and contact interfaces, thereby eliminating the need for explicit tracking algorithms while successfully simulating complex coupled phenomena like secondary crushing in Brazilian disk tests.
This paper proposes that the FLASH effect in cancer radiation therapy, which spares normal tissues while killing tumors, arises from structural differences between ordered normal and disordered tumor tissues that lead to the formation of electron-hole liquids in normal tissues, thereby suppressing harmful free radical generation.
This study demonstrates that applying mechanical pressure to epitaxial BiFeO3 thin films suppresses ferroelastic domain competition and significantly lowers the energy barrier for polarization reversal, enabling spontaneous switching at zero voltage and establishing mechanical stress as a powerful thermodynamic control parameter for manipulating multiferroic order.
This study utilizes first-principles calculations to demonstrate that hydrostatic pressure and biaxial compressive strain both suppress octahedral tilts in the hybrid bilayer-trilayer nickelate LaNiO to stabilize a tetragonal structure, yet they induce distinct electronic behaviors by causing the trilayer band to cross the Fermi level under pressure while keeping it below the Fermi level under strain.
Using fixed-node diffusion quantum Monte Carlo, this study resolves the debate over the magnetic ground state of bulk rutile RuO by demonstrating that it is nonmagnetic in its pristine structure but can be stabilized into an antiferromagnetic state under 3% compressive strain, thereby reconciling conflicting experimental reports.
This study investigates the high-pressure behavior of honeycomb layered magnetoelectrics Mn4Nb2O9 and Mn4Ta2O9 using Raman spectroscopy, synchrotron X-ray diffraction, and DFT calculations, revealing that pressure induces multiple isostructural transitions driven by local symmetry breaking and anisotropic lattice compression, ultimately leading to a long-range P-3c1 to P2/c structural phase transition with distinct pressure thresholds and mechanisms influenced by the differing spin-orbit coupling and orbital hybridization of Nb and Ta cations.
This study utilizes diffusion Monte Carlo to benchmark and optimize the Hubbard parameter in DFT+ calculations for strained monolayer MnBiTe, revealing that a strain-dependent following a quadratic form is essential for accurately capturing the material's magnetic properties.
This study reveals that the poor n-type conductivity in Al-rich AlGaN alloys, which hinders far-UVC LED performance, is primarily caused by Si dopants forming compensating negative-U DX centers on minority Ga sites and carbon impurities, findings that underscore the necessity of explicit alloy modeling and proper band gap temperature treatment to accurately predict carrier concentrations.