3992 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper introduces a unified theoretical framework based on a response tensor that establishes reciprocity between spin- and angle-resolved photoemission (SARPES) and its inverse process (SARIPES), enabling symmetry-adapted predictions of spin-dependent optical transitions and the direct calculation of inverse process intensities from standard photoemission data.
Using multislice electron ptychography, researchers achieved three-dimensional atomic-scale imaging of oxygen dopants in SrCuO, revealing their non-random clustering in tensile-strained regions and establishing strain as a key parameter for tuning doping in cuprate superconductors.
This study investigates CuZnGeTe as a tunable platform where first-principles calculations and experiments reveal that while lattice expansion or Sn substitution can induce a topological Weyl semimetal phase, the material's superior thermoelectric performance (ZT 1) is actually achieved in its narrow-gap semiconducting state due to lower thermal conductivity compared to the topological phase.
This study investigates the U-Ge phase diagram through co-deposition of uranium and germanium on single-crystal substrates, successfully stabilizing mixed-phase films dominated by UGe and UGe while observing UO formation at higher temperatures and demonstrating metallic behavior with residual resistivity ratios up to six in UGe-dominated samples.
By heavily doping cubic silicon carbide with nitrogen, researchers broke the long-standing rule that ferroelectricity and metallicity are mutually exclusive, creating a ferroelectric metal that exhibits atomic-scale polarization reversal and high-performance nonvolatile memory capabilities.
This paper introduces a numerically exact method called the finite-temperature Green's function cluster expansion, which combines generalized cluster expansions with the thermofield double formalism to compute momentum- and frequency-resolved polaron spectral functions at finite temperatures without requiring time evolution or analytic continuation.
This study utilizes complementary Sagnac magneto-optics and harmonic Hall measurements to demonstrate that interface engineering in Co/Gd-based synthetic ferrimagnets enables precise quantification and optimization of spin-orbit torques, revealing the active role of rare-earth layers in torque generation and facilitating low-power current-induced magnetic switching.
This paper introduces a graphite-gated architecture for bilayer graphene that completely isolates the active device from natural edges, enabling the fabrication of fully electrostatically defined Hall-bars with disordered boundaries and field-effect transistors exhibiting record-high quantum mobility of 2.5 × 10⁶ cm²/Vs.
This study demonstrates that by systematically combining different template vesicles, catalytic polymers, and amphiphiles, researchers created synthetic minimal cell variants exhibiting distinct, composition-dependent growth responses that map a multi-dimensional fitness landscape, thereby establishing a physicochemical pathway toward evolvable, self-reproducing artificial cells.
This study demonstrates room-temperature polarity control of the anomalous Nernst effect in high-magnetic-anisotropy MnAlGe thin films through Al/Ge compositional tuning, enabling enhanced thermoelectric output in practical devices by modulating intrinsic Berry curvature via sublattice-selective carrier doping.