3443 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper presents an all ultra-high-vacuum cluster tool that integrates molecular beam epitaxy growth with low-temperature optical spectroscopy to enable the in situ, high-resolution characterization of pristine, reactive 2D materials, thereby facilitating the optimization of scalable synthesis for advanced semiconductor applications.
This paper introduces an environment-dependent tight-binding framework that augments Slater-Koster hopping integrals with bond-screening functions, fitted to ab initio pseudo-atomic orbital Hamiltonians across multiple configurations to generate transferable, large-scale electronic structure models with ab initio precision.
This study introduces a machine learning-driven pathfinding algorithm based on the Crystal Normal Form to map diffusionless transformation pathways and analyze the kinetic persistence of metastable TiO polymorphs by correlating potential energy landscape topography with experimental phase stability.
This study employs Density Function Perturbation Theory to comprehensively characterize the infrared, Raman, piezoelectric, and elastic properties of ultra-wide band gap Mg-IV-N\textsubscript{2} (IV = Si, Ge, Sn) semiconductors, including their vibrational modes, phonon dispersions, and tensor properties within the Pna2\textsubscript{1} crystal structure.
Using molecular dynamics simulations, this study reveals that the transition from antiplasticization to plasticization in chitosan-water mixtures is governed by the connectivity of dynamically accessible free volume regions, which modulates the competition between weakened polymer-polymer and enhanced polymer-water interactions to dictate the material's elastic properties.
This study reveals that electroforming in Pt/NbOx memristors induces a previously unrecognized, highly correlated redistribution of oxygen and platinum, where localized Joule heating drives the formation of a Pt-rich filament alongside an oxygen-enriched pathway, challenging the conventional view of noble metal electrode inertness.
This study utilizes a vicinal Cellular Automata model to demonstrate that the morphological transition from meandered patterns to mound structures on crystal surfaces is governed by the competition between Ehrlich-Schwoebel barriers and adatom mobility, revealing a reversible pathway between these distinct growth regimes across varying deposition and diffusion conditions.
This study utilizes density functional theory to resolve the controversy over the magnetic ground state of rutile RuO by demonstrating that its transition between nonmagnetic and altermagnetic phases is driven by electron correlation and strain-induced volume changes.
This paper demonstrates a scalable method for significantly reducing the thermal conductivity of silicon membranes through block copolymer self-assembly and controlled nanohole etching, validated by a novel three-probe technique that overcomes thermal contact resistance challenges to achieve a fivefold reduction in thermal conductivity at room temperature.
This paper establishes a predictive theoretical model for altermagnet-based spin transport and demonstrates through first-principles calculations that KVSeO/MgO/KVSeO magnetic tunnel junctions exhibit a robust, giant tunneling magnetoresistance exceeding \%, offering a promising candidate for next-generation room-temperature non-volatile memory.