First-principles study of infrared, Raman, piezoelectric and elastic properties of Mg-IV-N\textsubscript{2} (IV = Ge, Si, Sn)
This study employs Density Function Perturbation Theory to comprehensively characterize the infrared, Raman, piezoelectric, and elastic properties of ultra-wide band gap Mg-IV-N\textsubscript{2} (IV = Si, Ge, Sn) semiconductors, including their vibrational modes, phonon dispersions, and tensor properties within the Pna2\textsubscript{1} crystal structure.