Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles
This paper presents an all-atomic-layer-deposited vertical complementary FeRAM architecture that utilizes a differential polarization summation scheme to achieve an ultra-high effective remanent polarization exceeding 100 uC/cm² and endurance beyond 10¹⁰ cycles, effectively overcoming the intrinsic limitations of traditional HfO₂-based ferroelectric memory.