4797 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This paper critically reviews recent advances in III-V semiconductor growth on group-IV substrates to demonstrate that antiphase boundaries are dictated by substrate terrace reconstruction rather than being generated by monoatomic step edges.
This study reveals that in the uranium Weyl semimetal UPS, strong electronic correlations and magnetic order drive a staged emergence of anomalous Hall transport, where a pronounced redistribution of spectral weight below 90 K—distinct from the magnetic ordering at 118 K—reshapes the topological states to produce a large intrinsic anomalous Hall conductivity.
This paper demonstrates that for two-dimensional lattice Hamiltonians and magnetic Schrödinger operators within a mobility gap, a nonzero bulk topological index guarantees that the entire energy interval constitutes the absolutely continuous spectrum of the corresponding half-space operator, with a spectral multiplicity bounded below by the magnitude of the index.
This study employs hybrid functional calculations to comprehensively investigate the structural, electronic, and magnetic properties of Er-doped - and -GaO, revealing distinct ground states (antiferromagnetic vs. ferromagnetic) and confirming that the material's 4 transition energy of approximately 1.53 m aligns with quantum telecommunication requirements.
This paper demonstrates that general-purpose Transformer models, when trained without explicit graph-based physical priors, can autonomously discover key molecular structures and interaction patterns from data alone, achieving accuracy competitive with physics-informed architectures and suggesting that such inductive biases may be learnable rather than strictly necessary.
This paper demonstrates that surfaces of centrosymmetric crystalline materials host chiral surface phonons with associated in-plane magnetic moments, revealing surfaces as a previously overlooked source of these phenomena due to reduced symmetry.
The paper demonstrates that Landau-Zener tunneling in small-gap insulators generates a singular DC current-voltage relation and strong high-harmonic generation with subexponentially decaying responses, offering a promising mechanism for efficient THz generation via frequency multiplication in solids.
This paper establishes a theoretical framework and validates it with DFT calculations to reveal universal Gaussian statistics and linear charge-potential correlations in complex metallic alloys, providing a computationally efficient foundation for predicting disorder-driven electrostatic fluctuations and guiding the design of advanced materials.
This study resolves the discrepancy between theoretical predictions and experimental observations of orbital angular momentum (OAM) relaxation by demonstrating, through first-principles simulations of MoS2 and silicene, that itinerant OAM contributions are essential for accurately describing long diffusion lengths, as atom-centered models fail to capture these effects and significantly underestimate OAM lifetimes.
By combining fluence-dependent photoluminescence, Shockley-Read-Hall modeling, and Bayesian inference across FACsPbI perovskites, this study reveals that trap filling resolves parameter degeneracies to identify universal non-radiative recombination signatures ( and ) and composition-specific defects (), thereby establishing a robust framework for comparing trapping behaviors in semiconducting materials.