Interaction-driven flat band and charge order in Fe5GeTe2

This study demonstrates that in the van der Waals magnet Fe5GeTe2, strong electronic correlations drive the formation of a flat band at the Fermi level, which in turn induces a 3×3R30\sqrt{3}\times\sqrt{3}\,R30^\circ charge order, establishing a paradigm where interaction-driven flat bands promote large-scale electronic ordering.

Qiang Gao, Gabriele Berruto, Khanh Duy Nguyen, Chaowei Hu, Paul Malinowski, Haoran Lin, Beomjoon Goh, Bo Gyu Jang, Xiaodong Xu, Peter Littlewood, Jiun-Haw Chu, Shuolong YangTue, 10 Ma🔬 cond-mat.mes-hall

Cryogenic Magnetization Dynamics in Chemically Stabilized, Tensile-Strained Ultrathin Yttrium Iron Garnets with Tunable Magnetic Anisotropy

This study demonstrates that growing tensile-strained ultrathin Yttrium Iron Garnet (YIG) films on Gadolinium Scandium Gallium Garnet (GSGG) substrates suppresses interfacial interdiffusion through enhanced chemical stability, thereby achieving ultralow damping and tunable magnetic anisotropy at cryogenic temperatures essential for advanced spintronic applications.

Jihyung Kim, Dongchang Kim, Seung-Gi Lee, Yung-Cheng Li, Jae-Chun Jeon, Jiho Yoon, Sachio Komori, Ryotaro Arakawa, Tomoyasu Taniyama, Stuart S. P. Parkin, Kun-Rok JeonTue, 10 Ma🔬 cond-mat.mes-hall

Interplay of electron-magnon scattering and spin-orbit induced electronic spin-flip scattering in a two-band Stoner model

This paper theoretically demonstrates that the interplay between electron-magnon scattering and spin-orbit-induced electron-electron scattering drives ultrafast demagnetization in itinerant ferromagnets by simultaneously generating magnons and transferring angular momentum to the lattice in a non-equilibrium microscopic scenario.

Félix Dusabirane, Kai Leckron, Baerbel Rethfeld, Hans Christian SchneiderTue, 10 Ma🔬 cond-mat.mes-hall

Chirality-dependent spin polarization in metals: linear and quadratic responses

This paper theoretically demonstrates that locally injected electric currents in chiral metals induce bulk spin polarization in the linear response and interface antiparallel spin polarization in the quadratic response, with the latter's sign being determined by dipole-like charge distributions rather than bulk spin currents, thereby reproducing experimental correlations between structural chirality and spin polarization direction.

Kosuke Yoshimi, Yusuke Kato, Yuta Suzuki, Shuntaro Sumita, Takuro Sato, Hiroshi M. Yamamoto, Yoshihiko Togawa, Hiroaki Kusunose, Jun-ichiro KishineTue, 10 Ma🔬 cond-mat.mes-hall

Au and Ag nanoparticles produced by ion implantation in single-crystalline β\beta-Ga2_2O3_3

This study demonstrates the successful formation of highly ordered, crystalline Ag and Au nanoparticles within single-crystalline β\beta-Ga2_2O3_3 via ion implantation and 550°C annealing, characterized by specific crystallographic alignment with the host matrix and confirmed by localised surface plasmon resonance.

Duarte Magalhães Esteves, Ana Sofia Sousa, Inês Freitas, Ângelo Rafael Granadeiro da Costa, Joana Madureira, Sandra Cabo Verde, Katharina Lorenz, Marco PeresTue, 10 Ma🔬 cond-mat.mes-hall

Terahertz-nanoscale visualization of the microscopic spin-charge architecture of colossal magnetoresistive switching

This study utilizes a custom-built cryogenic magneto-THz scattering-type scanning near-field optical microscopy platform to visualize the nanoscale evolution of colossal magnetoresistance in Pr2/3Ca1/3MnO3\text{Pr}_{2/3}\text{Ca}_{1/3}\text{MnO}_{3}, revealing that magnetic-field-induced spin switching initiates as 1–2 nm isolated sites that coalesce into ~15 nm conducting regions during the transition from an antiferromagnetic insulator to a ferromagnetic metal.

Samuel Haeuser, Randall K. Chan, Richard H. J. Kim, Joong-Mok Park, Martin Mootz, Thomas Koschny, Jigang WangTue, 10 Ma🔬 cond-mat.mes-hall

Fluctuation imaging of disorder in monolayer semiconductors

This paper demonstrates that super-resolution fluorescence fluctuation microscopy is a rapid and effective method for imaging localized exciton instability caused by interfacial disorder in monolayer semiconductors, offering a practical alternative to atomic force microscopy and hyperspectral imaging for evaluating material quality in nanoscale devices.

Tom T. C. Sistermans, Rasmus H. Godiksen, Sara A. Elrafei, Alberto G. CurtoTue, 10 Ma🔬 cond-mat.mes-hall

High Thermal Conductivity in Back-End-of-Line Compatible AlN Thin Films

This study demonstrates that polycrystalline aluminum nitride (AlN) thin films deposited at back-end-of-line compatible low temperatures exhibit consistently high thermal conductivity across various substrates and can reduce peak device temperatures by up to 44%, establishing AlN as a practical heat spreader material for integrated circuits.

Xufei Guo, Zirou Chen, Zifeng Huang, Yuxiang Wang, Jinwen Liu, Zhe ChengTue, 10 Ma🔬 cond-mat.mes-hall

Bulk OsO2 Single Crystals: Superior Catalysts for Water Oxidation

This study reports the successful synthesis of bulk OsO2 single crystals that outperform commercial RuO2 nanopowder in oxygen evolution reaction efficiency and stability, challenging the universal applicability of nanoscaling by demonstrating that crystal integrity is a critical descriptor for robust electrocatalysis.

Guojian Zhao, Zhihao Li, Ziang Meng, Shucheng Wang, Li Liu, Zhiyuan Duan, Xiaoning Wang, Hongyu Chen, Yuzhou He, Jingyu Li, Sixu Jiang, Xiaoyang Tan, Qinghua Zhang, Qianfan Zhang, Peixin Qin, Zhiqi LiuTue, 10 Ma🔬 cond-mat.mes-hall

Pressure-Induced Metal-Insulator and Paramagnet-Altermagnet Transitions in Rutile OsO2 Single Crystals

By synthesizing high-quality rutile OsO2 single crystals, researchers discovered that while the material is initially a paramagnetic metal, applying high pressure (44 GPa) induces a metal-insulator transition and drives a phase change into an altermagnetic state, demonstrating that external pressure can effectively tune its magnetic ground state.

Guojian Zhao, Ziang Meng, Wencheng Huang, Peixin Qin, Shaoheng Ruan, Liang Ma, Lin Zhu, Yuzhou He, Li Liu, Zhiyuan Duan, Xiaoning Wang, Hongyu Chen, Sixu Jiang, Jingyu Li, Xiaoyang Tan, K. Ozawa, Bosen Wang, Jinguang Cheng, Qinghua Zhang, Jianfeng Wang, Chaoyu Chen, Zhiqi LiuTue, 10 Ma🔬 cond-mat.mes-hall

Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)

This study investigates how layer structure and strain influence the electronic properties and surface morphology of InAs/InGaAs quantum wells on InP (001), revealing that layer design dictates mobility anisotropy, excessive thickness triggers quantum well collapse, and quantum confinement significantly affects band nonparabolicity.

Zijin Lei, Yuze Wu, Christian Reichl, Stefan Fält, Werner WegscheiderTue, 10 Ma⚛️ quant-ph

A defect in diamond with millisecond-scale spin relaxation time at room temperature

This paper characterizes the WAR5 defect in diamond as a promising quantum sensing platform, demonstrating millisecond-scale spin relaxation times at room temperature and extended coherence times at cryogenic temperatures alongside optical spin polarization capabilities.

Sounak Mukherjee, Anran Li, Johannes Eberle, Sean Karg, Zi-Huai Zhang, Mayer M. Feldman, Yilin Chen, Mark E. Turiansky, Mengen Wang, Yogendra Limbu, Tharnier O. Puel, Yueguang Shi, Matthew L. Markham, Rajesh L. Patel, Patryk Gumann, Michael E. Flatte, Chris G. Van de Walle, Stephen A. Lyon, Nathalie P. de LeonTue, 10 Ma⚛️ quant-ph