A flexible kinetic Monte Carlo framework for GaN molecular beam epitaxy with adaptive on-the-fly barrier evaluation
This paper presents a flexible, scalable lattice-based kinetic Monte Carlo framework for simulating GaN molecular beam epitaxy that integrates predefined activation-energy catalogs with adaptive, machine-learned on-the-fly barrier evaluations to accurately model complex growth phenomena such as island formation, Ostwald ripening, and temperature-driven island walking.