Growth of superconducting boron doped diamond on 4inch silicon wafers
This study demonstrates the successful growth of superconducting boron-doped diamond films on 4-inch silicon wafers via microwave plasma chemical vapour deposition, achieving a maximum critical temperature of 4.03 K while revealing that larger wafer sizes require significantly higher gas-phase boron concentrations due to reduced incorporation efficiency and exhibit radial non-uniformity in superconducting properties.