Oxide-nitride heteroepitaxy for low-loss dielectrics in superconducting quantum circuits
This paper demonstrates that heteroepitaxial γ-Al2O3 grown on TiN via pulsed laser deposition forms a high-quality, single-crystal dielectric with an intrinsically low two-level system loss of (2.8±0.1)×10−5, establishing it as a promising materials platform for reducing dielectric losses in superconducting quantum circuits.
David A. Garcia-Wetten, Mitchell J. Walker, Peter G. Lim, André Vallières, Maria G. Jimenez-Guillermo, Miguel A. Alvarado, Dominic P. Goronzy, Anna Grassellino, Jens Koch, Vinayak P. Dravid, Mark (…)2026-04-01⚛️ quant-ph