ALD W-Doped SnO2 TFTs for Indium-Free BEOL Electronics
This work demonstrates that back-end-of-line compatible, indium-free thin-film transistors featuring sub-10 nm tungsten-doped tin oxide channels deposited via low-temperature atomic layer deposition achieve superior performance and stability, particularly after post-fabrication oxygen annealing, making them a promising platform for monolithic 3D integration.
Mansi Anil Patil (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India), Devarshi Dhoble (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India), Shivaram Kubakaddi (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India), Mamta Raturi (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India), Marco A Villena (Department of Electronics and Computer Technology, Faculty of Sciences, University of Granada, Fuentenueva Avenue s/n, Granada, Spain), Gaurav Thareja (Department of Electronics and Computer Technology, Faculty of Sciences, University of Granada, Fuentenueva Avenue s/n, Granada, Spain), Saurabh Lodha (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India)2026-04-14🔬 physics.app-ph