First results of a Monolithic Active Pixel Sensor with Internal Signal Gain Fully Integrated in a 180 nm CMOS Technology
This paper presents the first results of the CASSIA sensor, a novel monolithic active pixel sensor fabricated in 180 nm CMOS technology that utilizes fully integrated internal gain layers to achieve signal amplification, enabling operation in both low-gain proportional and high-gain single-photon avalanche modes for improved timing resolution and pile-up mitigation in high-luminosity particle physics experiments.