Lateral Epitaxy Suppresses Self-Trapped Excitons in 2D perovskites
This study demonstrates that constructing lateral epitaxial heterostructures between PEA2PbCl4 and Sn-alloyed PEA2Pb1-xSnxBr4 suppresses self-trapped exciton emission and significantly enhances carrier mobility by mechanically stabilizing the lattice and facilitating efficient interfacial energy transfer.