Influence of Bottom Electrode Material on the Morphological and Frequency-Dependent Electrical Characteristics of Sputtered HfO₂ Thin-Film Metal-Insulator-Metal Capacitors
This study demonstrates that the bottom electrode material significantly influences the surface morphology and frequency-dependent electrical performance of RF-sputtered HfO₂ MIM capacitors, with the Al/HfO₂/Pt structure exhibiting superior dielectric properties and lower energy dissipation compared to the Al/HfO₂/Al configuration, making it more suitable for high-frequency RF applications.