2833 papers
Explore the fascinating intersection where quantum materials meet the complexity of everyday environments in the Cond-Mat — Mes-Hall section. This field investigates how tiny particles behave when caught between the orderly world of single atoms and the chaotic nature of bulk matter, revealing the hidden rules that govern electricity, magnetism, and heat in novel substances.
Gist.Science brings these cutting-edge discoveries to you directly from arXiv, the leading repository for physics preprints. We process every new submission in this category as soon as it appears, offering both straightforward, plain-language explanations and deep technical summaries to help researchers and curious minds alike grasp the latest breakthroughs without getting lost in dense equations.
Below are the most recent papers in this dynamic area of condensed matter physics, ready for you to explore.
This paper generalizes the Lieb-Mattis ordering theorem to fermionic mixtures with spinor components in the thermodynamic limit, demonstrating that the lowest-energy states within each permutation symmetry sector are well-approximated by U coherent states and exhibit distinct quantum phase transitions dependent on their symmetry sectors.
This paper derives optical selection rules for topological excitons in flat bands across three distinct two-band models, demonstrating how the underlying band topology and pseudo-spin textures dictate the polarization and brightness of excitons interacting with light.
This paper investigates persistent charge and spin currents in a ferromagnetic Hatano-Nelson ring, demonstrating how non-reciprocal hopping induces a non-Hermitian Aharonov-Bohm effect and revealing that disorder can surprisingly amplify spin transport across various topological and parameter regimes.
This paper resolves long-standing controversies regarding the reset mechanism in bipolar resistive memory by demonstrating that surface charge-induced radial electric fields, which scale inversely with the radius of nanoscale conductive filaments, provide the necessary driving force for oxygen ion migration and negative resistance switching.
This paper presents a scalable fabrication method for vertical Nb/graphene/Nb Josephson junctions using a freestanding van der Waals membrane architecture that enables double-sided metal deposition without exposing oxidation-sensitive interfaces, resulting in high-quality devices with reproducible supercurrents and clear superconducting characteristics.
This study demonstrates that two-dimensional topological spin textures—specifically skyrmion, bimeron, and meron crystals—serve as efficient sources of spin current with distinct polarization characteristics governed by their magnetic symmetries and spin-orbit coupling, thereby expanding design possibilities for spintronic devices even in the absence of net magnetization.
This paper investigates the interplay between quantum transport and topology in a commensurate off-diagonal Aubry-André-Harper chain, revealing how distinct topological edge modes govern transmission signatures, including a robust even-odd effect for zero-energy ballistic transport and the complex influence of environmental decoherence.
This paper predicts the formation of ferron-polaritons, hybrid light-matter quasiparticles arising from the ultrastrong coupling between collective ferroelectric excitations and Swihart photons in superconductor/ferroelectric/superconductor heterostructures, establishing a novel platform for high-speed quantum technologies at terahertz frequencies.
This paper demonstrates that 2D spin-momentum locking with conserved pseudospins generates anomalous currents that are cured by a 3D bulk response characterized by a mixed spin-momentum quadrupole moment, leading to phenomena such as a giant spin Hall effect.
This paper demonstrates that systematic threshold voltage shifts in Si/SiGe quantum devices can be achieved and precisely controlled via near-infrared optical illumination under an applied gate voltage, providing a reproducible method to set stable operating conditions and explaining the mechanism behind the successful recovery of qubit devices from charge injection events.