940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
This paper reports the first demonstration of monolithically integrated 940-nm VCSELs grown by molecular beam epitaxy on Ge(001) substrates, achieving room-temperature continuous-wave lasing with threshold currents below 3 mA through the use of a GaAs-on-Ge virtual substrate and real-time in situ process monitoring.