Structural and Optical Characteristics of beta-Ga2O3 Implanted with Rare Earth Ions
This study investigates the structural and optical properties of rare-earth-ion-implanted beta-Ga2O3, revealing that implantation-induced disorder and defect evolution are largely independent of the specific ion species, while demonstrating that RE3+ ions are excited via the host conduction band and maintain efficient emission even in the presence of significant lattice damage.