2898 papers
Condensed matter physics and materials science form a dynamic partnership, exploring how the collective behavior of atoms gives rise to the unique properties of solids and liquids. This field bridges the gap between fundamental quantum mechanics and the practical engineering of everything from flexible electronics to superconductors, turning abstract theories into tangible innovations that shape our daily lives.
At Gist.Science, we process every new preprint in this category directly from arXiv to make these complex discoveries accessible to everyone. Our team generates both plain-language overviews and detailed technical summaries for each paper, ensuring that researchers, students, and curious minds alike can grasp the latest breakthroughs without getting lost in dense jargon.
Below are the latest papers in condensed matter and materials science, organized by their most recent publication dates.
This study demonstrates that adding redox-active tungsten to iron powders enables a self-foaming mechanism that prevents sintering, thereby achieving high-capacity, stable, and scalable hydrogen storage over hundreds of redox cycles.
This study demonstrates that depositing MoS2 thin films on Al2O3 substrates via pulsed laser deposition optimizes hydrogen evolution reaction performance by stabilizing the metastable 1T phase through interfacial interactions, thereby enhancing charge transfer efficiency and electrochemically active surface area.
This study benchmarks the Dynamic Collision Fingerprint (DCF) against the Matminer library for 2D carbon allotropes, demonstrating that DCF achieves comparable predictive accuracy with significantly lower dimensionality and superior physical interpretability, making it a computationally efficient and transparent alternative for machine learning in materials science.
This paper presents a scalable, data-driven framework that combines the semi-empirical Extended Hückel Method with interpretable machine learning to efficiently screen over 4,000 two-dimensional materials for low-energy chalcogen impurity adsorption barriers, thereby accelerating the discovery of candidates for catalysis, sensing, and surface functionalization applications.
This paper derives an effective Kugel-Khomskii Hamiltonian with spin-orbit coupling and exact crystal field splitting to analytically map the ground-state phase diagram, revealing a quantum phase transition between a hidden-ordered state and a ferromagnetic state with antiferroorbital order driven by the cooperative effects of Hund's exchange and spin-orbit interactions.
This paper demonstrates that a semi-supervised, chemically-inspired training-by-proxy approach for generative variational autoencoders can drastically reduce the computational cost of multireference simulations, enabling the efficient design of Dy(III) complexes with record-breaking magnetic anisotropy from small datasets.
This study demonstrates that localized bubble corrugation in bilayer blue phosphorus creates a geometry-defined metal–semiconductor–metal homojunction capable of electromechanical switching and momentum-selective transport, enabling applications such as high-ratio memory elements and nanoscale displacement sensors without chemical doping.
This paper demonstrates that subjecting thin spherical shells to active fluctuations reliably induces a crumpled phase, characterized by a universal master curve for volume reduction, a general expression for the critical onset force, and a varying size exponent.
This study employs machine learning simulations to reveal a crucial metastable SMMS intermediate structure that drives metal atom swapping and alloying during the growth of MoS/WS heterostructures, while also identifying its potential as a low Schottky barrier contact electrode for field-effect transistors.
This study utilizes angle-resolved vector piezoresponse force microscopy to experimentally demonstrate the existence of topologically non-trivial meron and antimeron structures in marginally twisted bilayer WSe2, successfully distinguishing between twist-induced Bloch-type and strain-induced Neel-type polar domains to establish a link between moiré engineering and real-space topology in 2D semiconductors.