Comprehensive TCAD Investigation of RF Performance, Noise Characteristics, and Intrinsic Capacitances of InAlAs/InGaAs/InP HEMTs: Impact of Gate-to-Channel Distance and Gate Bias.
This study utilizes TCAD simulations to demonstrate that increasing the gate-to-channel distance in InAlAs/InGaAs/InP HEMTs generally reduces noise spectral densities and gate-to-drain capacitance while increasing output conductance and gate-to-source capacitance, whereas varying the gate bias produces distinct, often opposing, effects on current and voltage noise characteristics.