Temperature dependence of the long-term annealing behavior of neutron irradiated diodes from 8-inch p-type silicon wafers
This study investigates the isothermal annealing behavior of neutron-irradiated p-type silicon pad diodes from 8-inch wafers across a range of fluences and temperatures to extract annealing time constants, thereby improving the Hamburg model's ability to predict long-term radiation damage effects in the CMS High-Granularity Calorimeter sensors for the High-Luminosity LHC.