The RD50-MPW4: A Radiation Hard HV CMOS Sensor for Future Colliders
The RD50-MPW4, a 150 nm HV CMOS sensor prototype developed by the CERN RD50 collaboration, demonstrates exceptional radiation hardness with over 99% efficiency after irradiation to 1 MeV n, alongside high spatial (16 m) and timing (10 ns) resolutions, making it a promising candidate for future collider detectors.